1
Transistor
2SA683, 2SA684
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383 and 2SC1384
s
Features
q
Complementary pair with 2SC1383 and 2SC1384.
q
Allowing supply with the radial taping.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC51
TO92L Package
5.9
0.2
2.54
0.15
0.7
0.1
4.9
0.2
8.6
0.2
0.7
+0.3
0.2
13.5
0.5
3.2
0.45
+0.2
0.1
1.27
1.27
0.45
+0.2
0.1
1
3
2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
1.5
1
1
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
2SA683
2SA684
2SA683
2SA684
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 500mA
V
CE
= 5V, I
C
= 1A
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, I
E
= 50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
30
60
25
50
5
85
50
typ
0.2
0.85
200
20
max
0.1
340
0.4
1.2
30
Unit
A
V
V
V
V
V
MHz
pF
2SA683
2SA684
2SA683
2SA684
*
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
85 ~ 170
120 ~ 240
170 ~ 340
2
Transistor
2SA683, 2SA684
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
1.5
1.25
1
0.75
0.5
0.25
I
B
=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
Ta=25C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
12
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
=10V
Ta=25C
Base current I
B
(mA)
Collector current I
C
(mA
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
Ta=75C
25C
25C
I
C
/I
B
=10
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
25C
75C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
600
500
400
300
200
100
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
200
160
120
80
40
180
140
100
60
20
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
50
40
30
20
10
45
35
25
15
5
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.1
1
10
100
0.3
3
30
0
120
100
80
60
40
20
I
C
=10mA
Ta=25C
2SA684
2SA683
Base to emitter resistance R
BE
(k
)
Collector to emitter voltage V
CER
(V
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
V
CER
-- R
BE
3
Transistor
2SA683, 2SA684
0
160
40
120
80
140
20
100
60
1
10
10
2
10
3
10
4
V
CE
=10V
Ambient temperature Ta (C)
I
CEO
(Ta
)
I
CEO
(Ta=25C
)
0.1
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
Ta=25C
t=10ms
2SA684
2SA683
t=1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
I
CEO
-- Ta
Area of safe operation (ASO)
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